Welcome to the NSN RFQ page on Cosmos Purchasing; from here, you may request a competitive sourcing solution for any parts of interest. As a dependable NSN part in our inventory of Semiconductor Device Set items, this component with part number 4E598 and NSN 5961013380675 is available for purchase at any time. This product is manufactured by Cobham Advanced Electronic Solutions Inc, a trusted entity on our Approved Vendor List (AVL) who upholds a strict level of quality assurance in their practices. They are also a part of a larger supply network that reaches across the globe to enable expedited shipping for our customers wherever they are located.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-338-0675 Item PartTypeName: SEMICONDUCTOR DEVICE SET | 5961 | 013380675 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 4E598 | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE |
| TEST | TEST DATA DOCUMENT | 80063-A3006760 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| AGAV | END ITEM IDENTIFICATION | 5895-01-177-0791 RECEIVER-TRANSMITTER |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA | COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
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