Welcome to the NSN RFQ page on Cosmos Purchasing; from here, you may request a competitive sourcing solution for any parts of interest. As a dependable NSN part in our inventory of Microcircuit Set items, this component with part number 5309-1N and NSN 5962013630915 is available for purchase at any time. This product is manufactured by Harnischfeger Corp, a trusted entity on our Approved Vendor List (AVL) who upholds a strict level of quality assurance in their practices. They are also a part of a larger supply network that reaches across the globe to enable expedited shipping for our customers wherever they are located.
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Having been given the CAGE Code 56010, Harnischfeger Corp follows the strict guidelines for part standardization established by the US Department of Defense. If you would like to explore similar products, we invite you to return to our page of 5962 Microcircuits Electronic products or look at the list of related items below. Start the purchasing process on part number 5309-1N and any other items of interest today to learn all that Cosmos Purchasing can do as your sourcing partner!
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-363-0915 Item PartTypeName: MICROCIRCUIT SET | 5962 | 013630915 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
5962-8769001RA | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AFGA | OPERATING TEMP RANGE | -55.0/100.0 DEG CELSIUS 1ST MEMORY-55.0/125.0 DEG CELSIUS 2ND MEMORY |
ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 1ST MEMORYD-8 MIL-M-38510 2ND MEMORY |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT DEVICES,EPROM/PROM |
CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC 1ST MEMORYBIPOLAR METAL-OXIDE SEMICONDUCTOR 2ND MEMORY |
CSSL | DESIGN FUNCTION AND QUANTITY | 2 PROM PROGRAM TABLE |
TTQY | TERMINAL TYPE AND QUANTITY | 24 CASE 1ST MEMORY20 CASE 2ND MEMORY |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CBBL | FEATURES PROVIDED | PROGRAMMED |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEM | MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS NOMINAL ACCESS 1ST MEMORY70.00 NANOSECONDS NOMINAL ACCESS 2ND MEMORY |
CZER | MEMORY DEVICE TYPE | EEPROM ERR-100 ERR-100ROM ERR-100 ERR-100 |
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